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5SMX12H1273 PDF预览

5SMX12H1273

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
ABB 双极性晶体管
页数 文件大小 规格书
5页 68K
描述
IGBT-Die

5SMX12H1273 数据手册

 浏览型号5SMX12H1273的Datasheet PDF文件第1页浏览型号5SMX12H1273的Datasheet PDF文件第2页浏览型号5SMX12H1273的Datasheet PDF文件第3页浏览型号5SMX12H1273的Datasheet PDF文件第5页 
5SMX 12H1273  
100  
75  
50  
25  
0
100  
75  
50  
25  
0
VCE = 20 V  
25 °C  
125 °C  
125 °C  
25 °C  
VGE = 15 V  
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10 11 12  
VCE [V]  
VGE [V]  
Fig. 1  
Typical on-state characteristics  
Fig. 2  
Typical transfer characteristics  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VCC = 600 V  
IC = 50 A  
VCC = 600 V  
RGon = 15 ohm  
RGoff = 22 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 60 nH  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 60 nH  
Eon  
Eon  
Eoff  
Eoff  
0
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
IC [A]  
RG [ohm]  
Typical switching characteristics vs  
collector current  
Typical switching characteristics vs  
gate resistor  
Fig. 3  
Fig. 4  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1641-00 Apr 07  
page 4 of 5  

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