VCE
IC
=
=
6500 V
600 A
ABB HiPakTM
IGBT Module
5SNA 0600G650100
Doc. No. 5SYA1558-02 Jan 06
· Low-loss, rugged SPT chip-set
· Smooth switching SPT chip-set for
good EMC
· High insulation package
· AlSiC base-plate for high power
cycling capability
· AlN substrate for low thermal
resistance
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
VCES
IC
6500
600
V
A
A
V
W
A
A
VGE = 0 V, Tvj ³ 25 °C
Tc = 85 °C
ICM
VGES
Ptot
IF
tp = 1 ms, Tc = 85 °C
1200
20
-20
Tc = 25 °C, per switch (IGBT)
11900
600
IFRM
1200
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
Surge current
IFSM
tpsc
6000
10
A
VCC = 4400 V, VCEM CHIP £ 6500 V
IGBT short circuit SOA
µs
VGE £ 15 V, Tvj £ 125 °C
Isolation voltage
Visol
Tvj
1 min, f = 50 Hz
10200
125
125
125
125
6
V
Junction temperature
Junction operating temperature
Case temperature
°C
°C
°C
°C
Tvj(op)
Tc
-40
-40
-40
4
Storage temperature
Tstg
Ms
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
2)
Mounting torques
Nm
Mt1
Mt2
8
10
2
3
1)
2)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.