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5SNS0300U1201 PDF预览

5SNS0300U1201

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
ABB 双极性晶体管
页数 文件大小 规格书
9页 531K
描述
IGBT Module LoPak5 SPT

5SNS0300U1201 数据手册

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VCE  
IC  
=
=
1200 V  
300 A  
IGBT Module LoPak5 SPT  
5SNS 0300U120100  
Doc. No. 5SYA1528-02 July 03  
S Low-loss, rugged SPT chip-set  
S Smooth switching SPT chip-set for  
good EMC  
S Low profile compact baseless  
package for high power cycling  
capability  
S Snap-on PCB assembly  
S Integrated PTC substrate  
temperature sensor  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min max Unit  
Collector-emitter voltage  
DC collector current  
Peak collector current  
Gate-emitter voltage  
Total power dissipation  
DC forward current  
Peak forward current  
VCES  
IC  
ICM  
VGES  
Ptot  
IF  
1200  
V
A
A
V
W
A
A
VGE = 0 V, Tvj O 25 °C  
Th = 60 °C  
tp = 1 ms, Th = 60 °C  
300  
600  
20  
960  
300  
600  
-20  
Th = 25 °C, per switch (IGBT)  
IFM  
VR = 0 V, Tvj = 125 °C,  
Surge current  
IFSM  
3600  
A
tp = 10 ms, half-sinewave  
VCC =900 V, VCEM CHIP ? 1200 V  
VGE ? 15 V, Tvj ? 125 °C  
IGBT short circuit SOA  
tpsc  
10  
µs  
Isolation voltage  
Visol  
Tvj  
Tc(op)  
Tstg  
M1  
1min, f =50Hz  
2500  
150  
125  
125  
3
V
Junction temperature  
Case operating temperature  
Storage temperature  
°C  
°C  
°C  
-40  
-40  
2
Base-heatsink, M5 screws  
Main terminals, M6 screws  
Mounting torques  
Nm  
M2  
4
5
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  

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