VCE
IC
=
=
1200 V
300 A
IGBT Module LoPak5 SPT
5SNS 0300U120100
Doc. No. 5SYA1528-02 July 03
S Low-loss, rugged SPT chip-set
S Smooth switching SPT chip-set for
good EMC
S Low profile compact baseless
package for high power cycling
capability
S Snap-on PCB assembly
S Integrated PTC substrate
temperature sensor
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
VCES
IC
ICM
VGES
Ptot
IF
1200
V
A
A
V
W
A
A
VGE = 0 V, Tvj O 25 °C
Th = 60 °C
tp = 1 ms, Th = 60 °C
300
600
20
960
300
600
-20
Th = 25 °C, per switch (IGBT)
IFM
VR = 0 V, Tvj = 125 °C,
Surge current
IFSM
3600
A
tp = 10 ms, half-sinewave
VCC =900 V, VCEM CHIP ? 1200 V
VGE ? 15 V, Tvj ? 125 °C
IGBT short circuit SOA
tpsc
10
µs
Isolation voltage
Visol
Tvj
Tc(op)
Tstg
M1
1min, f =50Hz
2500
150
125
125
3
V
Junction temperature
Case operating temperature
Storage temperature
°C
°C
°C
-40
-40
2
Base-heatsink, M5 screws
Main terminals, M6 screws
Mounting torques
Nm
M2
4
5
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.