Datasheet > 5SNA1200E2501

5SNA1200E2501

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
ABB		双极性晶体管
页数	文件大小	规格书
9页	204K
描述
IGBT Module

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

5SNA1200E2501 数据手册

V_CE

I_C

2500 V

1200 A

ABB HiPak^TM

IGBT Module

5SNA 1200E250100

Doc. No. 5SYA 1557-02 July 04

· Low-loss, rugged SPT chip-set

· Smooth switching SPT chip-set for

good EMC

· Industry standard package

· High power density

· AlSiC base-plate for high power

cycling capability

· AlN substrate for low thermal

resistance

Maximum rated values

Parameter

Symbol Conditions

min max Unit

Collector-emitter voltage

DC collector current

Peak collector current

Gate-emitter voltage

Total power dissipation

DC forward current

Peak forward current

V_CES

I_C

V_GE= 0 V

2500

1200

2400

T_c= 80 °C

I_CM

V_GES

P_tot

I_F

t_p= 1 ms, T_c= 80 °C

-20

T_c= 25 °C, per switch (IGBT)

11000

1200

2400

I_FRM

V_R= 0 V, T_vj= 125 °C,

t_p= 10 ms, half-sinewave

Surge current

I_FSM

t_psc

11000

V_CC= 1900 V, V_{CEM CHIP}£ 2500 V

IGBT short circuit SOA

µs

V_GE£ 15 V, T_vj£ 125 °C

Isolation voltage

V_isol

T_vj

1 min, f = 50 Hz

5000

150

125

Junction temperature

Junction operating temperature

Case temperature

°C

T_vj(op)

T_c

-40

Storage temperature

T_stg

M₁

Base-heatsink, M6 screws

Main terminals, M8 screws

Auxiliary terminals, M4 screws

Mounting torques

M₂

M₃

Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747

For detailed mounting instructions refer to ABB Document No. 5SYA2039

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

12 3 4 5 6 7...9

下载PDF

与5SNA1200E2501相关器件

型号	品牌	描述	获取价格	数据表
5SNA1200E3301	ABB	IGBT Module	获取价格
5SNA1200G3301	ABB	IGBT Module	获取价格
5SNA1500E3303	ABB	IGBT Module	获取价格
5SNA1600N1701	ABB	IGBT Module	获取价格
5SNA1800E1701	ABB	IGBT Module	获取价格
5SNA2400E1701	ABB	IGBT Module	获取价格