VCE
IC
=
=
1700 V
800 A
ABB HiPakTM
IGBT Module
5SNE 0800M170100
Doc. No. 5SYA1590-00 Oct 06
· Low-loss, rugged SPT chip-set
· Smooth switching SPT chip-set for
good EMC
· Industry standard package
· High power density
· AlSiC base-plate for high power
cycling capability
· AlN substrate for low thermal
resistance
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
VCES
IC
VGE = 0 V, Tvj ≥ 25 °C
Tc = 80 °C
1700
800
V
A
A
V
W
A
A
ICM
VGES
Ptot
IF
tp = 1 ms, Tc = 80 °C
1600
20
-20
Tc = 25 °C, per switch (IGBT)
4800
800
IFRM
1600
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
Surge current
IFSM
tpsc
6600
10
A
VCC = 1200 V, VCEM CHIP £ 1700 V
IGBT short circuit SOA
µs
VGE £ 15 V, Tvj £ 125 °C
Isolation voltage
Visol
Tvj
1 min, f = 50 Hz
4000
150
125
125
125
6
V
Junction temperature
Junction operating temperature
Case temperature
°C
°C
°C
°C
Tvj(op)
Tc
-40
-40
-40
4
Storage temperature
Tstg
Ms
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
2)
Mounting torques
Nm
Mt1
Mt2
8
10
2
3
1)
2)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.