Datasheet > 5SNA0400J6501

5SNA0400J6501

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
ABB		双极性晶体管
页数	文件大小	规格书
9页	181K
描述
IGBT Module

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数据手册

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5SNA0400J6501 数据手册

V_CE

I_C

6500 V

400 A

ABB HiPak^TM

IGBT Module

5SNA 0400J650100

Doc. No. 5SYA 1592-01 Jun 07

· Low-loss, rugged SPT chip-set

· Smooth switching SPT chip-set for

good EMC

· High insulation package

· AlSiC base-plate for high power

cycling capability

· AlN substrate for low thermal

resistance

Maximum rated values

Parameter

Symbol Conditions

min max Unit

Collector-emitter voltage

DC collector current

Peak collector current

Gate-emitter voltage

Total power dissipation

DC forward current

Peak forward current

V_CES

I_C

V_GE= 0 V, T_vj≥ 25 °C

T_c= 85 °C

6500

400

800

I_CM

V_GES

P_tot

I_F

t_p= 1 ms, T_c= 85 °C

-20

T_c= 25 °C, per switch (IGBT)

7350

400

800

I_FRM

V_R= 0 V, T_vj= 125 °C,

t_p= 10 ms, half-sinewave

Surge current

I_FSM

t_psc

4000

V_CC= 4400 V, V_{CEM CHIP}£ 6500 V

IGBT short circuit SOA

µs

V_GE£ 15 V, T_vj£ 125 °C

Isolation voltage

V_isol

T_vj

1 min, f = 50 Hz

10200

125

Junction temperature

Junction operating temperature

Case temperature

°C

T_vj(op)

T_c

-40

Storage temperature

T_stg

M_s

Base-heatsink, M6 screws

Main terminals, M8 screws

Auxiliary terminals, M4 screws

Mounting torques

M_t1

M_t2

Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747

For detailed mounting instructions refer to ABB Document No. 5SYA2039

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

12 3 4 5 6 7...9

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