VCE
IC
=
=
2500 V
54 A
IGBT-Die
5SMX 12L2511
x
Die size: 12.4 12.4 mm
Doc. No. 5SYA1640-00 Mar 07
· Low loss, rugged SPT technology
· Smooth switching for good EMC
· Emitter metallisation optimized for press-pack packaging
· Passivation: SIPOS and Silicon Nitride
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
VCES
IC
VGE = 0 V
2500
54
V
A
A
V
ICM
Limited by Tvjmax
108
20
VGES
-20
-40
VCC = 2000 V, VCEM £ 2500 V
IGBT short circuit SOA
Junction temperature
tpsc
Tvj
10
µs
°C
VGE £ 15 V, Tvj £ 125 °C
125
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.