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5SMX12L2511 PDF预览

5SMX12L2511

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
ABB 双极性晶体管
页数 文件大小 规格书
5页 70K
描述
IGBT-Die

5SMX12L2511 数据手册

 浏览型号5SMX12L2511的Datasheet PDF文件第1页浏览型号5SMX12L2511的Datasheet PDF文件第2页浏览型号5SMX12L2511的Datasheet PDF文件第4页浏览型号5SMX12L2511的Datasheet PDF文件第5页 
5SMX 12L2511  
Unit  
Mechanical properties  
Parameter  
x
x
L W  
12.4 12.4  
Overall die  
mm  
mm  
mm  
exposed  
front metal  
x
x
L W (except gate pad)  
9.0 9.0  
Dimensions  
x
x
L W  
1.46 1.61  
gate pad  
thickness  
front (E)  
back (C)  
310 ± 20  
4 + 4  
µm  
µm  
µm  
AlSi1 + TiNiAg  
AlSi1 + TiNiAg  
3)  
Metallization  
1.8 + 1.2  
3)  
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.  
Outline drawing  
Note: all dimensions are shown in mm  
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.  
This product has been designed and qualified for Industrial Level.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1640-00 Mar 07  
page 3 of 5  

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