5SMX 12L2511
Unit
Mechanical properties
Parameter
x
x
L W
12.4 12.4
Overall die
mm
mm
mm
exposed
front metal
x
x
L W (except gate pad)
9.0 9.0
Dimensions
x
x
L W
1.46 1.61
gate pad
thickness
front (E)
back (C)
310 ± 20
4 + 4
µm
µm
µm
AlSi1 + TiNiAg
AlSi1 + TiNiAg
3)
Metallization
1.8 + 1.2
3)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1640-00 Mar 07
page 3 of 5