生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.68 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.025 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高工作温度: | 125 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.2 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK230-U1B-A | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK230-UAA | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK230-UAA | RENESAS |
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RF SMALL SIGNAL, FET | |
3SK231 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK231U1C | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) | SOT-143R | |
3SK231-U1C | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK231-U1C-A | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK231U1D | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) | SOT-143R | |
3SK231-U1D | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK231-U1D-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |