Datasheet > 3SK231U1C

3SK231U1C

更新时间： 2024-09-16 23:21:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	53K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 18V V(BR)DSS \| 25MA I(D) \| SOT-143R

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3SK231U1C 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK231

RF AMP. FOR UHF TV TUNER

N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

Low Noise Figure NF = 2.0 dB TYP. (@ = 900 MHz)

High Power Gain G^ps= 17.5 dB TYP. (@ = 900 MHz)

Enhancement Typ.

(Unit: mm)

+0.2

−0.3

2.8

+0.2

−0.1

1.5

Suitable for use as RF amplifier in UHF TV tuner.

Automatically Mounting : Embossed Type Taping

Small Package : 4 Pins Mini Mold Package. (SC-61)

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

V^DSX

V^G1S

V^G2S

V^G1D

V^G2D

I^D

8 ( 10)*

5°

Total Power Dissipation

Channel Temperature

Storage Temperature

*R^L10 k

P^D

200

T^ch

125

T^stg

55 to +125

PIN CONNECTIONS

1. Source

2. Drain

3. Gate 2

4. Gate 1

PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage

due to those voltages or fields.

Document No. P10588EJ2V0DS00 (2nd edition)

(Previous No. TC-2283)

Date Published March 1997 N

Printed in Japan

1993

12 3 4 5 6 7 8

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