Datasheet > 3SK231-UAC

3SK231-UAC

更新时间： 2024-09-18 08:20:15

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
7页	89K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN

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3SK231-UAC 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK231

RF AMP. FOR UHF TV TUNER

N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

•

Low Noise Figure NF = 2.0 dB TYP. (@ = 900 MHz)

High Power Gain G^ps= 17.5 dB TYP. (@ = 900 MHz)

Enhancement Typ.

PACKAGE DIMENSIONS

(Unit: mm)

+0.2

−0.3

2.8

+0.2

Suitable for use as RF amplifier in UHF TV tuner.

Automatically Mounting : Embossed Type Taping

Small Package : 4 Pins Mini Mold Package. (SC-61)

−0.1

1.5

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

V^DSX

V^G1S

V^G2S

VG1D

V^G2D

I^D

±8 (±10)*

5°

°C

Total Power Dissipation

Channel Temperature

Storage Temperature

*R^L≥ 10 kΩ

P^D

200

T^ch

125

T^stg

−55 to +125 °C

PIN CONNECTIONS

1. Source

2. Drain

3. Gate 2

4. Gate 1

PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage

due to those voltages or fields.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10030EJ01V0DS (1st edition)

The mark ! shows major revised points.

(Previous No. P10588EJ2V0DS00)

Date Published October 2001 CP(K)

Printed in Japan

NEC Corporation 1993

NEC Compound Semiconductor Devices 2001

12 3 4 5 6 7

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