生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.27 | Is Samacsys: | N |
最小漏源击穿电压: | 12 V | 最大漏极电流 (ID): | 0.035 A |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK237XY-UR | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET | |
3SK238 | ETC |
获取价格 |
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3SK238XW | RENESAS |
获取价格 |
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel | |
3SK238XW-TL | HITACHI |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET | |
3SK238XW-UL | RENESAS |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET | |
3SK238XW-UR | RENESAS |
获取价格 |
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel | |
3SK239A | HITACHI |
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GaAs Dual Gate MES FET | |
3SK239AXR | HITACHI |
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暂无描述 | |
3SK239AXR-TL | HITACHI |
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暂无描述 | |
3SK239AXR-TR | HITACHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars |