生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | unknown |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.82 |
Is Samacsys: | N | 外壳连接: | SOURCE |
配置: | SINGLE | 最大漏极电流 (ID): | 0.025 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 0.08 pF |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DUAL GATE, DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 0.25 W | 最小功率增益 (Gp): | 21 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK242-T1 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK242-T1V11 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK242-T1-V11 | RENESAS |
获取价格 |
RF SMALL SIGNAL, FET | |
3SK242-T1V12 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK242-T1-V12 | RENESAS |
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RF SMALL SIGNAL, FET | |
3SK242-T1V13 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK242-T1-V13 | RENESAS |
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RF SMALL SIGNAL, FET | |
3SK242-T1VAA | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK242-T1VAB | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK242-T1-VAB | RENESAS |
获取价格 |
RF SMALL SIGNAL, FET |