5秒后页面跳转
3SK242 PDF预览

3SK242

更新时间: 2024-11-07 21:13:51
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
226页 3184K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SUPER MINIMOLD PACKAGE-4

3SK242 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.82
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最大漏极电流 (ID):0.025 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):0.08 pF
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:DUAL GATE, DEPLETION MODE最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
功耗环境最大值:0.25 W最小功率增益 (Gp):21 dB
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

3SK242 数据手册

 浏览型号3SK242的Datasheet PDF文件第2页浏览型号3SK242的Datasheet PDF文件第3页浏览型号3SK242的Datasheet PDF文件第4页浏览型号3SK242的Datasheet PDF文件第5页浏览型号3SK242的Datasheet PDF文件第6页浏览型号3SK242的Datasheet PDF文件第7页 
C&C  
for Human Potential  
Microcomputer 1  
IC Memory 2  
SEMICONDUCTOR  
SELECTION GUIDE  
G U I D E B O O K  
Semi-Custom IC 3  
Particular Purpose IC 4  
General Purpose Linear IC 5  
Transistor / Diode / Thyristor 6  
Microwave Device / Consumer Use High Frequency Device 7  
Optical Device 8  
Packages 9  
Index (Quick Reference by Type Number) 10  
Oct. 1995  

与3SK242相关器件

型号 品牌 获取价格 描述 数据表
3SK242-T1 NEC

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK242-T1V11 NEC

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK242-T1-V11 RENESAS

获取价格

RF SMALL SIGNAL, FET
3SK242-T1V12 NEC

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK242-T1-V12 RENESAS

获取价格

RF SMALL SIGNAL, FET
3SK242-T1V13 NEC

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK242-T1-V13 RENESAS

获取价格

RF SMALL SIGNAL, FET
3SK242-T1VAA NEC

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK242-T1VAB NEC

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK242-T1-VAB RENESAS

获取价格

RF SMALL SIGNAL, FET