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3SK243 PDF预览

3SK243

更新时间: 2024-10-30 21:13:51
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
226页 3184K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SUPER MINIMOLD PACKAGE-4

3SK243 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
HTS代码:8541.21.00.75风险等级:5.84
外壳连接:SOURCE配置:SINGLE
最大漏极电流 (ID):0.025 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):0.03 pF最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:DUAL GATE, DEPLETION MODE
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL功耗环境最大值:0.25 W
最小功率增益 (Gp):17 dB认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

3SK243 数据手册

 浏览型号3SK243的Datasheet PDF文件第2页浏览型号3SK243的Datasheet PDF文件第3页浏览型号3SK243的Datasheet PDF文件第4页浏览型号3SK243的Datasheet PDF文件第5页浏览型号3SK243的Datasheet PDF文件第6页浏览型号3SK243的Datasheet PDF文件第7页 
C&C  
for Human Potential  
Microcomputer 1  
IC Memory 2  
SEMICONDUCTOR  
SELECTION GUIDE  
G U I D E B O O K  
Semi-Custom IC 3  
Particular Purpose IC 4  
General Purpose Linear IC 5  
Transistor / Diode / Thyristor 6  
Microwave Device / Consumer Use High Frequency Device 7  
Optical Device 8  
Packages 9  
Index (Quick Reference by Type Number) 10  
Oct. 1995  

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