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3SK250TE85L PDF预览

3SK250TE85L

更新时间: 2024-09-15 20:59:35
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
5页 118K
描述
TRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal

3SK250TE85L 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownHTS代码:8541.21.00.75
风险等级:5.84外壳连接:SOURCE
配置:SINGLEFET 技术:METAL SEMICONDUCTOR
最大反馈电容 (Crss):0.03 pF最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:DUAL GATE, DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最小功率增益 (Gp):15 dB
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

3SK250TE85L 数据手册

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