生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.75 |
风险等级: | 5.84 | 外壳连接: | SOURCE |
配置: | SINGLE | FET 技术: | METAL SEMICONDUCTOR |
最大反馈电容 (Crss): | 0.03 pF | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DUAL GATE, DEPLETION MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 15 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK250TE85R | TOSHIBA |
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TRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal | |
3SK251 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 30MA I(D) | SOT-143VAR | |
3SK252 | NEC |
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RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI | |
3SK252-U1E | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK252-UAE | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK252-UAE-A | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK253 | NEC |
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RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI | |
3SK253U1G | RENESAS |
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UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SUPER MINIMOLD PACKAGE-4 | |
3SK253-U1G | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK253-U1G-A | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |