Datasheet > 3SK254-U1E-A

3SK254-U1E-A

更新时间： 2024-09-16 20:02:11

品牌	Logo	应用领域
日电电子 - NEC		放大器 ISM频段光电二极管晶体管
页数	文件大小	规格书
7页	99K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SUPERMINI-4

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中文翻译

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技术参数
数据手册

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3SK254-U1E-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-G4	针数：	4
Reach Compliance Code：	compliant	HTS代码：	8541.21.00.75
风险等级：	5.34	其他特性：	LOW NOISE
配置：	SINGLE	最大漏极电流 (ID)：	0.025 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	0.03 pF
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e6	元件数量：	1
端子数量：	4	工作模式：	DUAL GATE, DEPLETION MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	16 dB
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

3SK254-U1E-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK254

RF AMPLIFIER FOR CATV TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS SUPER MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

Low VDD Use

(VDS = 3.5 V)

(Unit: mm)

Driving Battery

2.1±±.2

Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz)

NF2 = 0.8 dB TYP. (f = 55 MHz)

1.25±±.1

•

High Power Gain : G^PS= 19.0 dB TYP. (f = 470 MHz)

Suitable for use as RF amplifier in CATV tuner.

Automatically Mounting : Embossed Type Taping

Small Package

4 Pins Super Mini Mold

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

VDSX

V^G1S

V^G2S

VG1D

V^G2D

I^D

8^*1

°C

Total Power Dissipation

Channel Temperature

Storage Temperature

130^*2

T^ch

125

T^stg

–55 to +125

PIN CONNECTIONS

1. Source

2. Drain

3. Gate2

4. Gate1

*1: R^L≥ 10 kΩ

*2: Free air

PRECAUTION:

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

or fields.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU1±±33EJ±1V±DS (1st edition)

(Previous No. P1±585EJ2V±DS±±)

Date Published October 2±±1 CP(K)

Printed in Japan

The mark

shows major revised points.



NEC Corporation 1993



NEC Compound Semiconductor Devices 2001

12 3 4 5 6 7

中文翻译

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与3SK254-U1E-A相关器件

型号	品牌	获取价格	描述	数据表
3SK255	NEC	获取价格	RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER
3SK255(NE93318)	ETC	获取价格	Discrete
3SK255-U1G	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK255-U1G-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK256	TOSHIBA	获取价格	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
3SK256TE85R	TOSHIBA	获取价格	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
3SK257	TOSHIBA	获取价格	N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER, VHF, UHF RF AMPLIFIER APPLICATIONS)
3SK257TE85L	TOSHIBA	获取价格	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
3SK257TE85R	TOSHIBA	获取价格	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
3SK258	TOSHIBA	获取价格	N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF AMPLIFIER APPLICATIONS)

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