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3SK260YTE85R PDF预览

3SK260YTE85R

更新时间: 2024-11-06 14:28:55
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
4页 122K
描述
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal

3SK260YTE85R 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknown风险等级:5.14
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:15 V最大漏极电流 (ID):0.03 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):0.04 pF
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:1
端子数量:4工作模式:DUAL GATE, DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:N-CHANNEL
最小功率增益 (Gp):21 dB认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

3SK260YTE85R 数据手册

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