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3SK269TX PDF预览

3SK269TX

更新时间: 2024-11-09 20:01:19
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 74K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

3SK269TX 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:15 V最大漏极电流 (ID):0.008 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:DUAL GATE, ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

3SK269TX 数据手册

 浏览型号3SK269TX的Datasheet PDF文件第2页浏览型号3SK269TX的Datasheet PDF文件第3页 

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