是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.32 | Is Samacsys: | N |
其他特性: | LOW NOISE | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 12.5 V |
最大漏极电流 (Abs) (ID): | 0.03 A | 最大漏极电流 (ID): | 0.03 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 0.04 pF |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DUAL GATE, DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.15 W |
最小功率增益 (Gp): | 23.5 dB | 认证状态: | Not Qualified |
子类别: | FET RF Small Signal | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK292_07 | TOSHIBA |
获取价格 |
TV Tuner, VHF RF Amplifier Application | |
3SK293 | TOSHIBA |
获取价格 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICAITONS) | |
3SK293(TE85L,F) | TOSHIBA |
获取价格 |
Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R | |
3SK294 | TOSHIBA |
获取价格 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) | |
3SK294(TE85L,F) | TOSHIBA |
获取价格 |
Trans MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R | |
3SK294_07 | TOSHIBA |
获取价格 |
TV Tuner, VHF RF Amplifier Application | |
3SK295 | HITACHI |
获取价格 |
Silicon N-Channel Dual Gate MOS FET | |
3SK295 | RENESAS |
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Silicon N-Channel Dual Gate MOS FET | |
3SK295ZQ-TL | HITACHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK295ZQ-TL | RENESAS |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4 |