Datasheet > 3SK293(TE85L,F)

3SK293(TE85L,F)

更新时间： 2024-02-02 11:00:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	337K
描述
Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R

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数据手册

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3SK293(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	1.72
Base Number Matches：	1

3SK293(TE85L,F) 数据手册

3SK293

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type

3SK293

TV Tuner, UHF RF Amplifier Applications

Unit: mm

•

Superior cross modulation performance

Low reverse transfer capacitance: C = 16 fF (typ.)

rss

Low noise figure: NF = 1.5dB (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

12.5

±8

Gate 1-source voltage

Gate 2-source voltage

Drain current

G1S

G2S

±8

°C

1.Drain

2.Source

3.Gate1

4.Gate2

Drain power dissipation

Channel temperature

Storage temperature range

100

125

USQ

stg

−55 to 125

JEDEC

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEITA

TOSHIBA

2-2K1B

Weight: 6 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate 1 leakage current

Gate 2 leakage current

= 0, V

= ±6 V, V

= 0

⎯

±50

G1SS

G1S

G2S

= 0, V

= ±6 V

G2SS

G2S

= −0.5 V,

G2S

= −0.5 V, V

G1S

Drain-source voltage

12.5

⎯

(BR) DSX

= 100 μA

Drain current

= 6 V, V

= 0, V

= 4.5 V

⎯

0.1

1.3

1.5

DSS

G1S

G2S

G1S

G2S

Gate 1-source cut-off voltage

Gate 2-source cut-off voltage

= 4.5 V, I = 100 μA

0.3

0.5

0.8

1.0

G1S (OFF)

G2S (OFF)

= 4.0 V, I = 100 μA

= 4.5 V, I = 10 mA,

Forward transfer admittance

⎪Y ⎪

⎯

f = 1 kHz

Input capacitance

Reverse transfer capacitance

Power gain

⎯

2.0

2.6

⎯

iss

= 6 V, V

= 4.5 V, I = 10 mA,

f = 1 MHz

G2S

rss

22.5

1.5

= 6 V, V

= 4.5 V, I = 10 mA,

f = 800 MHz

Noise figure

2.5

Start of commercial production

1996-05

2014-03-01

12 3 4 5 6

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