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3SK270 PDF预览

3SK270

更新时间: 2024-11-06 19:27:27
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
1页 65K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, S-MINI PACKAGE-4

3SK270 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.84
配置:SINGLE最小漏源击穿电压:15 V
最大漏极电流 (Abs) (ID):0.03 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:DUAL GATE, ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

3SK270 数据手册

  

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