生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | unknown |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 15 V |
最大漏极电流 (Abs) (ID): | 0.03 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DUAL GATE, ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK270TX | PANASONIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK271TX | PANASONIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
3SK272 | PANASONIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars | |
3SK272TX | PANASONIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK273S | PANASONIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars | |
3SK274 | TOSHIBA |
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N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) | |
3SK275 | TOSHIBA |
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TRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal | |
3SK28 | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 3.7MA I(DSS) | TO-72 | |
3SK282 | PANASONIC |
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RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Ch | |
3SK283 | TOSHIBA |
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N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) |