Datasheet > 3SK291_07

3SK291_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		射频放大器电视
页数	文件大小	规格书
6页	744K
描述
TV Tuner, UHF RF Amplifier Applications

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

3SK291_07 数据手册

3SK291

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type

3SK291

TV Tuner, UHF RF Amplifier Applications

Unit: mm

•

Superior cross modulation performance

Low reverse transfer capacitance: C = 0.016 pF (typ.)

rss

Low noise figure: NF = 1.5dB (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

12.5

±8

Gate 1-source voltage

Gate 2-source voltage

Drain current

G1S

G2S

±8

°C

Drain power dissipation

Channel temperature

Storage temperature range

150

stg

125

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-3J1A

Weight: 0.013 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate 1 leakage current

Gate 2 leakage current

= 0, V

= ±6 V, V

= 0

⎯

±50

G1SS

G1S

G2S

= 0, V

G2S

= −0.5 V,

G2S

= ±6 V

G2SS

= −0.5 V, V

G1S

Drain-source voltage

12.5

⎯

(BR) DSX

= 100 μA

Drain current

= 6 V, V

= 0, V

= 4.5 V

⎯

0.1

1.3

1.5

DSS

G1S

G2S

G1S

G2S

Gate 1-source cut-off voltage

Gate 2-source cut-off voltage

= 4.5 V, I = 100 μA

0.3

0.5

0.8

1.0

G1S (OFF)

G2S (OFF)

= 4.0 V, I = 100 μA

= 4.5 V, I = 10 mA,

Forward transfer admittance

⎪Y ⎪

⎯

f = 1 kHz

Input capacitance

Reverse transfer capacitance

Power gain

⎯

2.0

2.6

⎯

iss

= 6 V, V

= 4.5 V, I = 10 mA,

f = 1 MHz

G2S

rss

22.5

1.5

= 6 V, V

= 4.5 V, I = 10 mA,

G2S

f = 800 MHz (Figure 1)

Noise figure

2.5

2007-11-01

12 3 4 5 6

下载PDF

与3SK291_07相关器件

型号	品牌	描述	获取价格	数据表
3SK292	TOSHIBA	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS)	获取价格
3SK292_07	TOSHIBA	TV Tuner, VHF RF Amplifier Application	获取价格
3SK293	TOSHIBA	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICAITONS)	获取价格
3SK293(TE85L,F)	TOSHIBA	Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R	获取价格
3SK294	TOSHIBA	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS)	获取价格
3SK294(TE85L,F)	TOSHIBA	Trans MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R	获取价格