是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | USQ, 2-2K1B, 4 PIN | Reach Compliance Code: | unknown |
风险等级: | 5.74 | 配置: | SINGLE |
最小漏源击穿电压: | 15 V | 最大漏极电流 (ID): | 0.03 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 0.04 pF |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DUAL GATE, ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK260GR | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 13.5V V(BR)DSS | 30MA I(D) | TSOP | |
3SK260-GR | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, USQ, 2-2K1B, 4 PIN, FET RF Sm | |
3SK260GRTE85L | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
3SK260GRTE85R | TOSHIBA |
获取价格 |
暂无描述 | |
3SK260-GRTE85R | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
3SK260TE85L | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
3SK260TE85R | TOSHIBA |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
3SK260Y | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 13.5V V(BR)DSS | 30MA I(D) | TSOP | |
3SK260-Y | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, USQ, 2-2K1B, 4 PIN, FET RF Sm | |
3SK260-YTE85L | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |