是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.25 | Is Samacsys: | N |
其他特性: | LOW NOISE | 配置: | SINGLE |
最小漏源击穿电压: | 13.5 V | 最大漏极电流 (Abs) (ID): | 0.03 A |
最大漏极电流 (ID): | 0.03 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 0.04 pF | 最高频带: | VERY HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DUAL GATE, DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 21 dB |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK260-YTE85L | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
3SK260YTE85R | TOSHIBA |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
3SK260-YTE85R | TOSHIBA |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
3SK263 | SANYO |
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FM Tuner, VHF Tuner, High-Frequency Amp Applications | |
3SK263(RJ)TG | ONSEMI |
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Small Signal Field-Effect Transistor, 0.03A I(D), 15V, 1-Element, N-Channel, Silicon, Meta | |
3SK263_12 | SANYO |
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FM Tuner, VHF Tuner, High-Frequency Amplifi er Applications | |
3SK263-5-TG-E | SANYO |
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FM Tuner, VHF Tuner, High-Frequency Amplifi er Applications | |
3SK263-5-TG-E | ONSEMI |
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N 沟道双门 MOSFET,15V,30mA,PG=21dB,NF=1.1dB,CP4 | |
3SK264 | SANYO |
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VHF Tuner, High-Frequency Amp Applications | |
3SK264-5 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 30MA I(D) | SOT-143R |