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3SK254

更新时间: 2024-11-05 22:36:19
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页数 文件大小 规格书
6页 58K
描述
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

3SK254 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK254  
RF AMPLIFIER FOR CATV TUNER  
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR  
4 PINS SUPER MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
Low VDD Use  
:
(VDS = 3.5 V)  
(Unit: mm)  
Driving Battery  
2.1±0.2  
Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz)  
NF2 = 0.8 dB TYP. (f = 55 MHz)  
1.25±0.1  
High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz)  
Suitable for use as RF amplifier in CATV tuner.  
Automatically Mounting : Embossed Type Taping  
Small Package  
:
4 Pins Super Mini Mold  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Gate1 to Drain Voltage  
Gate2 to Drain Voltage  
Drain Current  
VDSX  
VG1S  
VG2S  
VG1D  
VG2D  
ID  
18  
±8*1  
±8*1  
V
V
V
18  
V
18  
V
25  
130*2  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PD  
Tch  
125  
Tstg  
–55 to +125  
PIN CONNECTIONS  
1. Source  
2. Drain  
3. Gate2  
4. Gate1  
*1: RL 10 kΩ  
*2: Free air  
PRECAUTION:  
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage  
or fields.  
Document No. P10585EJ2V0DS00 (2nd edition)  
(Previous No. TD-2307)  
Date Published August 1995 P  
Printed in Japan  
1993  
©

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