3SK253

更新时间： 2024-09-14 22:36:19

品牌	Logo	应用领域
日电电子 - NEC		晶体射频放大器晶体管场效应晶体管栅
页数	文件大小	规格书
6页	55K
描述
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

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3SK253 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK253

RF AMPLIFIER FOR UHF TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

Low VDD Use

(VDS = 3.5 V)

(Unit: mm)

Driving Battery

+0.2

–0.3

2.8

Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)

High Power Gain : G^PS= 18.0 dB TYP. (f = 900 MHz)

Suitable for use as RF amplifier in UHF TV tuner.

Automatically Mounting : Embossed Type Taping

+0.2

–0.1

1.5

Package

4 Pins Mini Mold

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

VDSX

VG1S

V^G2S

V^G1D

VG2D

I^D

±8^*1

5°

200^*2

°C

Total Power Dissipation

Channel Temperature

Storage Temperature

P^D

Tch

125

T^stg

–55 to +125

5°

PIN CONNECTIONS

*1: RL ≥ 10 kΩ

*2: Free air

1. Source

2. Drain

3. Gate2

4. Gate1

PRECAUTION:

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

fields.

Document No. P10583EJ2V0DS00 (2nd edition)

(Previous No. TD-2372)

Date Published August 1995 P

Printed in Japan

1993

12 3 4 5 6

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