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3SK242-VAC PDF预览

3SK242-VAC

更新时间: 2024-10-30 15:42:07
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
6页 102K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SUPER MINIMOLD PACKAGE-4

3SK242-VAC 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.84
外壳连接:SOURCE配置:SINGLE
最大漏极电流 (ID):0.025 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):0.08 pF最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:DUAL GATE, DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL功耗环境最大值:0.25 W
最小功率增益 (Gp):21 dB认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

3SK242-VAC 数据手册

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