Datasheet > 3SK239L

3SK239L

更新时间： 2024-11-08 23:21:11

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3SK239L 数据手册

3SK239A

GaAs N–Channel Dual Gate MESFET

Application

CMPAK-4

UHF RF amplifier

Features

• Excellent low noise characteristics

(NF = 1.3 dB typ at f = 900 MHz)

• Capable of low voltage operation

1. Source

2. Gate1

3. Gate2

4. Drain

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

———————————————————————————————————————————

Gate1 to source voltage

–6

G1S

———————————————————————————————————————————

Gate2 to source voltage

–6

G2S

———————————————————————————————————————————

Drain current

———————————————————————————————————————————

Channel power dissipation

100

———————————————————————————————————————————

Channel temperature

Tch

125

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +125

°C

———————————————————————————————————————————

Marking is “XR–”.

12 3 4 5

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