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3SK239L PDF预览

3SK239L

更新时间: 2024-11-06 23:21:11
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3SK239L 数据手册

 浏览型号3SK239L的Datasheet PDF文件第2页浏览型号3SK239L的Datasheet PDF文件第3页浏览型号3SK239L的Datasheet PDF文件第4页浏览型号3SK239L的Datasheet PDF文件第5页 
3SK239A  
GaAs N–Channel Dual Gate MESFET  
Application  
CMPAK-4  
UHF RF amplifier  
Features  
2
• Excellent low noise characteristics  
(NF = 1.3 dB typ at f = 900 MHz)  
• Capable of low voltage operation  
3
1
4
1. Source  
2. Gate1  
3. Gate2  
4. Drain  
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
12  
V
DS  
———————————————————————————————————————————  
Gate1 to source voltage  
V
–6  
V
G1S  
———————————————————————————————————————————  
Gate2 to source voltage  
V
–6  
V
G2S  
———————————————————————————————————————————  
Drain current  
I
50  
mA  
D
———————————————————————————————————————————  
Channel power dissipation  
P
100  
mW  
ch  
———————————————————————————————————————————  
Channel temperature  
Tch  
125  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +125  
°C  
———————————————————————————————————————————  
Marking is “XR–”.  

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