生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.28 | 配置: | SINGLE |
最小漏源击穿电压: | 12 V | 最大漏极电流 (ID): | 0.035 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK234 | ETC |
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3SK235 | ETC |
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3SK235XY-TL | RENESAS |
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35mA, 12V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
3SK235XY-UL | RENESAS |
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Small Signal Field-Effect Transistor, 0.035A I(D), 12V, 1-Element, N-Channel, Silicon, Met | |
3SK236 | ETC |
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3SK237 | ETC |
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3SK237XY | RENESAS |
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RF Small Signal Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel | |
3SK237XY-TL | RENESAS |
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RF Small Signal Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel | |
3SK237XY-UL | RENESAS |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET | |
3SK237XY-UR | RENESAS |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET |