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3SK234

更新时间： 2024-09-16 23:21:11

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3SK234 数据手册

3SK234

Silicon N Channel Dual Gate MOS FET

VHF TV Tuner RF Amplifier

Features

MPAK-4

• Low voltage operation.

• Superior cross modulation characteristics.

Table 1 Absolute Maximum Ratings

(Ta = 25°C)

Item

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Drain to source voltage 12

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Gate 1 to source voltage ±10

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Gate 2 to source voltage ±10

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Drain current 35 mA

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Channel power dissipation Pch 150 mW

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Channel temperature Tch 125 °C

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Storage temperature Tstg –55 to +125 °C

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Symbol Rating

Unit

G1S

1. Source

2. Gate 1

3. Gate 2

4. Drain

G2S

12 3 4

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3SK235XY-TL	RENESAS	获取价格	35mA, 12V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
3SK235XY-UL	RENESAS	获取价格	Small Signal Field-Effect Transistor, 0.035A I(D), 12V, 1-Element, N-Channel, Silicon, Met
3SK236	ETC	获取价格
3SK237	ETC	获取价格
3SK237XY	RENESAS	获取价格	RF Small Signal Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel
3SK237XY-TL	RENESAS	获取价格	RF Small Signal Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel
3SK237XY-UL	RENESAS	获取价格	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET
3SK237XY-UR	RENESAS	获取价格	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET
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