Datasheet > 3SK237

3SK237

更新时间： 2024-09-16 23:21:11

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3SK237 数据手册

3SK237

Silicon N–Channel Dual Gate MOSFET

Application

CMPAK-4

UHF/VHF RF amplifier

Features

• High gain and low niose

• Capable of low voltage operation

1. Source

2. Gate1

3. Gate2

4. Drain

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

———————————————————————————————————————————

Gate1 to source voltage

±10

G1S

———————————————————————————————————————————

Gate2 to source voltage

±10

G2S

———————————————————————————————————————————

Drain current

———————————————————————————————————————————

Channel power dissipation

100

———————————————————————————————————————————

Channel temperature

Tch

125

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +125

°C

———————————————————————————————————————————

Marking is “XY”.

12 3 4

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3SK237XY	RENESAS	获取价格	RF Small Signal Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel
3SK237XY-TL	RENESAS	获取价格	RF Small Signal Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel
3SK237XY-UL	RENESAS	获取价格	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET
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3SK238	ETC	获取价格
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3SK238XW-UL	RENESAS	获取价格	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET
3SK238XW-UR	RENESAS	获取价格	RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel
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