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3SK232_07

更新时间： 2024-09-17 03:00:03
品牌 Logo 应用领域
东芝 - TOSHIBA 射频放大器电视
页数 文件大小 规格书
4页 423K
描述
TV Tuner, UHF RF Amplifier Applications

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中文翻译

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3SK232_07 数据手册

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3SK232  
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type  
3SK232  
TV Tuner, UHF RF Amplifier Applications  
Unit: mm  
•
•
•
Superior cross modulation performance.  
Low reverse transfer capacitance.: C = 20 fF (typ.)  
rss  
Low noise figure.: NF = 1.5dB (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
12.5  
±8  
V
V
DS  
Gate 1-source voltage  
Gate 2-source voltage  
Drain current  
V
V
G1S  
G2S  
±8  
V
I
30  
mA  
mW  
°C  
°C  
D
Drain power dissipation  
Channel temperature  
Storage temperature range  
P
150  
D
ch  
stg  
T
125  
T
−55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-3J1A  
Weight: 0.013 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Gate 1 leakage current  
Gate 2 leakage current  
I
I
V
V
V
= 0, V  
= 0, V  
= ±6 V, V  
= 0  
⎯
⎯
⎯
⎯
±50  
±50  
nA  
nA  
G1SS  
DS  
G1S  
G1S  
G2S  
= 0, V  
G2S  
= −0.5 V  
G2S  
= ±6 V  
G2SS  
DS  
= −0.5 V, V  
G1S  
Drain-source voltage  
V
12.5  
⎯
⎯
V
(BR) DSX  
I
= 100 μA  
D
Drain current  
I
V
V
V
V
= 6 V, V  
= 6 V, V  
= 6 V, V  
= 6 V, V  
= 4.5 V, V  
= 0 V  
⎯
⎯
0.1  
1.4  
1.5  
mA  
V
DSS  
DS  
DS  
DS  
DS  
G2S  
G2S  
G1S  
G2S  
G1S  
Gate 1-source cut-off voltage  
Gate 2-source cut-off voltage  
V
V
= 4.5 V, I = 100 μA  
0.4  
0.5  
0.9  
1.0  
G1S (OFF)  
G2S (OFF)  
D
= 4.0 V, I = 100 μA  
V
D
= 4.5 V, I = 10 mA  
D
Forward transfer admittance  
⎪Yfs⎪  
17  
21  
⎯
mS  
f = 1 kHz  
= 6 V, V  
Input capacitance  
Reverse transfer capacitance  
Power gain  
C
V
= 4.5 V, I = 10 mA  
0.9  
⎯
1.5  
20  
2.1  
40  
pF  
fF  
iss  
DS  
f = 1 MHz  
= 6 V, V  
G2S  
D
C
rss  
G
V
= 4.5 V, I = 10 mA  
18  
⎯
20  
⎯
dB  
dB  
ps  
DS  
G2S  
D
f = 800 MHz (Figure 1)  
Noise figure  
NF  
1.5  
2.5  
1
2007-11-01  
1234

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