Datasheet > 3SK230-UAA

3SK230-UAA

更新时间： 2024-09-17 20:08:23

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
7页	142K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN

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技术参数
数据手册

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3SK230-UAA 技术参数

生命周期：	Obsolete	零件包装代码：	SC-61
包装说明：	SMALL OUTLINE, R-PDSO-G4	针数：	4
Reach Compliance Code：	unknown	HTS代码：	8541.21.00.95
风险等级：	5.68	其他特性：	LOW NOISE
配置：	SINGLE	最大漏极电流 (ID)：	0.025 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	0.03 pF
最高频带：	VERY HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G4
元件数量：	1	端子数量：	4
工作模式：	DUAL GATE, ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	16.5 dB
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

3SK230-UAA 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK230

RF AMP. FOR VHF/CATV TUNER

N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

The Characteristic of Cross-Modulation is good.

(Unit: mm)

CM = 108 dBµ (TYP.) @f = 470 MHz, G^R= −30 dB

•

+0.2

–0.3

Low Noise Figure

NF1 = 2.2 dB TYP. (@ = 470 MHz)

NF2 = 0.9 dB TYP. (@ = 55 MHz)

G^PS= 19.5 dB TYP. (@ = 470 MHz)

2.8

1.5

+0.2

–0.1

•

High Power Gain

Enhancement Typ.

Suitable for use as RF amplifier in CATV tuner.

Automatically Mounting: Embossed Type Taping

Small Package: 4 Pins Mini Mold Package. (SC-61)

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

V^DSX

V^G1S

V^G2S

V^G1D

V^G2D

I^D

±8(±10)*¹

°C

Total Power Dissipation

Channel Temperature

Storage Temperature

R^L≥ 10 kΩ

P^D

200

PIN CONNECTIONS

1. Source

2. Drain

3. Gate 2

4. Gate 1

T^ch

125

T^stg

−55 to +125

PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due

to those voltages or fields.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10029EJ01V0DS (1st edition)

The mark shows major revised points.

(Previous No. P10587EJ3V0DS00)

Date Published October 2001 CP(K)

Printed in Japan



NEC Corporation 1993

NEC Compound Semiconductor Devices 2001



12 3 4 5 6 7

中文翻译

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与3SK230-UAA相关器件

型号	品牌	获取价格	描述	数据表
3SK231	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK231U1C	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 18V V(BR)DSS \| 25MA I(D) \| SOT-143R
3SK231-U1C	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK231-U1C-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK231U1D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 18V V(BR)DSS \| 25MA I(D) \| SOT-143R
3SK231-U1D	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK231-U1D-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK231-UAC	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK231-UAD	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK232	TOSHIBA	获取价格	TV TUNER, UHF RF AMPLIFIER APPLICATIONS.

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