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3SK230-U1A-A PDF预览

3SK230-U1A-A

更新时间: 2024-11-07 19:30:07
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
8页 66K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN

3SK230-U1A-A 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:PLASTIC, SC-61, 4 PINReach Compliance Code:compliant
风险等级:5.68Is Samacsys:N
其他特性:LOW NOISE配置:SINGLE
最大漏极电流 (ID):0.025 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):0.03 pF最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:4工作模式:DUAL GATE, ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最小功率增益 (Gp):16.5 dB
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

3SK230-U1A-A 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK230  
RF AMP. FOR VHF/CATV TUNER  
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR  
4 PINS MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
The Characteristic of Cross-Modulation is good.  
(Unit: mm)  
CM = 108 dB (TYP.) @f = 470 MHz, GR = 30 dB  
+0.2  
–0.3  
2.8  
Low Noise Figure  
NF1 = 2.2 dB TYP. (@ = 470 MHz)  
NF2 = 0.9 dB TYP. (@ = 55 MHz)  
GPS = 19.5 dB TYP. (@ = 470 MHz)  
+0.2  
–0.1  
1.5  
High Power Gain  
Enhancement Typ.  
Suitable for use as RF amplifier in CATV tuner.  
Automatically Mounting: Embossed Type Taping  
Small Package: 4 Pins Mini Mold Package. (SC-61)  
5°  
5°  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Gate1 to Drain Voltage  
Gate2 to Drain Voltage  
Drain Current  
VDSX  
VG1S  
VG2S  
VG1D  
VG2D  
ID  
18  
±8(±10)*1  
±8(±10)*1  
18  
V
V
V
V
18  
V
5°  
5°  
25  
mA  
mW  
C
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
RL 10 k  
PD  
200  
PIN CONNECTIONS  
1. Source  
2. Drain  
3. Gate 2  
4. Gate 1  
Tch  
125  
Tstg  
55 to +125  
C
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due  
to those voltages or fields.  
Document No. P10587EJ3V0DS00 (3rd edition)  
Date Published November 1996 N  
Printed in Japan  
©
1993  

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