生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 1.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 75 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK2661 | TOSHIBA |
功能相似 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER | |
STP6NC60 | STMICROELECTRONICS |
功能相似 |
N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2 | |
STP5NC50 | STMICROELECTRONICS |
功能相似 |
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PA |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK894 | TOSHIBA |
获取价格 |
2SK894 | |
2SK896 | TOSHIBA |
获取价格 |
TRANSISTOR 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK897 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK897M | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 4A I(D) | TO-220AB | |
2SK897MR | FUJI |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 550V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK897-MR | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK899 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOS-FET | |
2SK900 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK901 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK901A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 270V V(BR)DSS | 20A I(D) | TO-247 |