生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 450 V |
最大漏极电流 (Abs) (ID): | 5 A | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 1.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 40 W |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK930 | ISAHAYA |
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FIELD-EFFECT TRANSISTOR | |
2SK930_10 | ISAHAYA |
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FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNTION TYPE | |
2SK930-11-1C | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK930-13-1C | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK930-13-1E | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK930C | ISAHAYA |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SC-70, | |
2SK930D | ISAHAYA |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SC-70, | |
2SK930E | ISAHAYA |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SC-70, | |
2SK930-T11-1E | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK930-T13-1D | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC |