生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
配置: | SINGLE | FET 技术: | JUNCTION |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK930E | ISAHAYA |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SC-70, | |
2SK930-T11-1E | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK930-T13-1D | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK930-T13-1E | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK932 | SANYO |
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High-Frequency Low-Noise Amp Applications | |
2SK932_12 | SANYO |
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High-Frequency Low-Noise Amplifi er Applications | |
2SK932-21 | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 5MA I(DSS) | SOT-23 | |
2SK932-22 | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 7.3MA I(DSS) | SOT-23 | |
2SK932-22-TB-E | SANYO |
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High-Frequency Low-Noise Amplifi er Applications | |
2SK932-22-TB-E | ONSEMI |
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N 沟道 JFET,15V,5 至 24mA,50mS,CP |