生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.82 | 其他特性: | LOGIC LEVEL COMPATIBLE |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 25 A | 最大漏源导通电阻: | 0.08 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 40 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK944 | TOSHIBA |
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TRANSISTOR 22 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK945 | TOSHIBA |
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TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK945LBTE16L | TOSHIBA |
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TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Po | |
2SK945LBTE16R | TOSHIBA |
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TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Po | |
2SK945STA1 | TOSHIBA |
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TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERMOLD, DPAK-3, FET General | |
2SK945TE16L | TOSHIBA |
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TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK945TE16R | TOSHIBA |
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TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK947 | FUJI |
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N-CHANNLEL SILICON POWER MOSFET | |
2SK947M | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-220AB | |
2SK947MR | ETC |
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MOSFET |