Datasheet > 2SK932-22-TB-E

2SK932-22-TB-E

更新时间： 2024-02-02 01:52:38

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	111K
描述
N 沟道 JFET，15V，5 至 24mA，50mS，CP

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技术参数
数据手册

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2SK932-22-TB-E 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	2 weeks
风险等级：	0.78	JESD-609代码：	e6
湿度敏感等级：	1	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

2SK932-22-TB-E 数据手册

DATA SHEET

www.onsemi.com

N-Channel JFET

15 V, 10 to 24 mA, 50 mS, CP

2SK932

1: Source

2: Drain

3: Gate

SC−59 / CP3

CASE 318BJ

Applications

MARKING DIAGRAM

• AM Tuner RF Amplification, Low Noise Amplifier

Features

• Adoption of FBET Process

• Large | yfs |

• Small Ciss

• Ultralow Noise Figure

• Ultrasmall−sized Package Permitting 2SK932−applied Sets to be

Made Smaller and Slimer

ELECTRICAL CONNECTION

• These are Pb−Free Devices

Specifications

ABSOLUTE MAXIMUM RATINGS ( T = 25°C)

Parameter

Drain−to−Source Voltage

Gate−to−Drain Voltage

Gate Current

Symbol Conditions

Ratings

Unit

−15

DSX

GDS

°C

ORDERING INFORMATION

Drain Current

†

Device

Package

Shipping

Allowable Power Dissipation

Junction Temperature

Storage Temperature

200

2SK932−23−TB−E

3,000 / Tape &

Reel

(Pb−Free)

Tstg

150

2SK932−24−TB−E

3,000 / Tape &

Reel

−55 to +150

°C

(Pb−Free)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

December, 2022 − Rev. 4

2SK932/D

12 3 4 5 6

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