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STP6NC60 PDF预览

STP6NC60

更新时间: 2024-01-14 00:09:16
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 366K
描述
N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET

STP6NC60 数据手册

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STP6NC60 - STP6NC60FP  
STB6NC60-1  
N-CHANNEL 600V - 1- 6A TO-220/TO-220FP/I2PAK  
PowerMESH™II MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STP(B)6NC60(-1)  
STP6NC60FP  
600 V  
600 V  
< 1.2 Ω  
< 1.2 Ω  
6 A  
6 A  
TYPICAL R (on) = 1.0 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
3
2
1
TO-220  
TO-220FP  
3
2
1
DESCRIPTION  
2
I PAK  
The PowerMESHII is the evolution of the first  
generation of MESH OVERLAY™. The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP(B)6NC60(-1) STP6NC60FP  
V
Drain-source Voltage (V = 0)  
600  
600  
±30  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
Drain Current (continuos) at T = 25°C  
6
6(*)  
3.8(*)  
24(*)  
40  
A
D
C
I
Drain Current (continuos) at T = 100°C  
3.8  
24  
A
D
C
I
( )  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
125  
1.0  
W
TOT  
C
Derating Factor  
0.32  
W/°C  
V/ns  
V
dv/dt (1)  
Peak Diode Recovery voltage slope  
Insulation Withstand Voltage (DC)  
Storage Temperature  
3
V
-
2500  
ISO  
T
stg  
–65 to 150  
150  
°C  
°C  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
(*) Limited only by maximum temperature allowed  
May 2001  
(1)I 6A, di/dt 100A/µs, V V  
, T T  
j JMAX.  
SD  
DD  
(BR)DSS  
1/10  

STP6NC60 替代型号

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