Datasheet > STP70N10F4-H

STP70N10F4-H

更新时间： 2024-11-12 19:34:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	748K
描述
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,65A I(D),TO-220AB

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技术参数
数据手册

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STP70N10F4-H 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	65 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	150 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

STP70N10F4-H 数据手册

STP70N10F4-H

N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™

Power MOSFET in TO-220

Features

Type

V_DSS

R_DS(on)max

I_D

STP70N10F4-H

100 V

< 0.0165 Ω

65 A

■ Exceptional dv/dt capability

■ Extremely low on-resistance R

■ 100% avalanche tested

DS(on)

TO-220

Application

■ Switching applications

Description

Figure 1.

Internal schematic diagram

This STripFET™ DeepGATE™ Power MOSFET

technology is among the latest improvements,

which have been especially tailored to minimize

on-state resistance, with a new gate structure,

providing superior switching performance.

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Table 1.

Order codes

STP70N10F4-H

Device summary

Marking

Package

TO-220

Packaging

70N10F4

Tube

Note:

The device meets ECOPACK standards, an environmentally-friendly grade of products

commonly referred to as “halogen-free” . See Section 4: Package mechanical data

December 2009

Doc ID 16500 Rev 1

1/12

www.st.com

12 3 4 5 6 7...12

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