Datasheet > 2SK3748_0507

2SK3748_0507

更新时间： 2024-11-09 07:32:39

品牌	Logo	应用领域
三洋 - SANYO		开关高压
页数	文件大小	规格书
4页	53K
描述
High-Voltage, High-Speed Switching Applications

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2SK3748_0507 数据手册

Ordering number : ENN8250A

2SK3748

N-Channel Silicon MOSFET

High-Voltage, High-Speed Switching

Applications

2SK3748

Features

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.

•

High reliability (Adoption of HVP process).

•

Attachment workability is good by Mica-less package.

•

Avalanche resistance guarantee.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

1500

±20

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

I *

Drain Current (Pulse)

PW≤10µs, duty cycle≤1%

3.0

°C

Allowable Power Dissipation

Tc=25°C

Channel Temperature

Storage Temperature

Tch

150

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

170

*Shows chip capability

*1 V =99V, L=20mH, I =4A

*2 L≤20mH, single pulse

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

=1mA, V =0V

Unit

min

1500

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

µA

(BR)DSS

=1200V, V =0V

100

±10

3.5

DSS

GSS

= ±16V, V =0V

V (off)

=10V, I =1mA

2.5

1.7

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Marking : K3748

yfs

(on)

=20V, I =2A

2.8

=2A, V =10V

D GS

Ω

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72905 MS IM TB-00001688 / 31005QB TS IM TB-00001272 No.8250-1/4

12 3 4

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与2SK3748_0507相关器件

型号	品牌	获取价格	描述	数据表
2SK3748_12	SANYO	获取价格	High-Voltage, High-Speed Switching Applications
2SK3748-1E	SANYO	获取价格	High-Voltage, High-Speed Switching Applications
2SK3748-1E	ONSEMI	获取价格	N 沟道功率 MOSFET，1500V，4A，7Ω
2SK3749	NEC	获取价格	N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING
2SK374R	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction
2SK374S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction
2SK375	HITACHI	获取价格	HIGH SPEED POWER SWITCHING
2SK3752-01R	ETC	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3753-01R	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3754	TOSHIBA	获取价格	Silicon N Channel MOS Type Relay Drive, DC−DC Converter and Motor Drive Applications

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