Datasheet > 2SK3760

2SK3760

更新时间： 2024-11-24 22:52:59

品牌	Logo	应用领域
美丽微 - FORMOSA		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	86K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( PIE-MOS6)

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2SK3760 数据手册

2SK3760

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ)

2SK3760

unit：ｍｍ

Switching Regulator Applications

4.7max

4.7 max

101.05.5mmaaxx

3.84±0.2

1.3

Low drain-source ON resistance: R

High forward transfer admittance: |Y | = 2.5S (typ.)

= 1.7Ω (typ.)

DS (ON)

Low leakage current: I

DSS

= 100 μA (V

= 600 V)

= 10 V, I = 1 mA)

Enhancement-mode: V = 2.0~4.0 V (V

Maximum Ratings (Ta

= 25°C)

11..55mmaxax

0.81

0.45

0.81 max

0.45

Characteristics

Symbol

Rating

Unit

Drain-source voltage

600

±30

3.5

DSS

DGR

GSS

2.7

2.54

Drain-gate voltage (R = 20 kW)

Gate-source voltage

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

1. Gate

Drain power dissipation (Tc = 25°C)

2. Drain(HEAT SINK)

3. Source

Single pulse avalanche energy

6.3

(Note 2)

Avalanche current

3.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

JEDEC

TO-220AB

SC-46

―

150

Storage temperature range

-55~150

stg

JEITA

TOSHIBA

Weight : 2.0g(typ.)

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.08

83.3

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: V = 90 V, T = 25°C(initial), L = 0.9 mH, I = 3.5 A, R = 25 W

DD ch

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2004-02-26

12 3 4 5 6

中文翻译

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