Datasheet > 2SK3774-01S

2SK3774-01S

更新时间： 2024-10-15 14:58:39

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	146K
描述
T-pack

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK3774-01S 数据手册

2SK3774-01L,S,SJ

FUJI POWER MOSFET

200311

N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series

Outline Drawings [mm]

Features

High speed switching

No secondary breadown

Avalanche-proof

Low on-resistance

Low driving power

Applications

Switching regulators

DC-DC converters

UPS (Uninterruptible Power Supply)

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)

See to P4

Item

Symbol Ratings

Unit

Remarks

Drain-source voltage

VDS

VDSX

300

VGS=-30V

Continuous drain current

Pulsed drain current

Gate-source voltage

Non-Repetitive

ID(puls]

VGS

IAS

±128

±30

Tch 150°C

Maximum avalanche current

Non-Repetitive

EAS

EAR

597.4

Maximum avalanche energy

Repetitive

Equivalent circuit schematic

Maximum avalanche energy

Maximum Drain-Source dV/dt

Peak diode recovery dV/dt

Max. power dissipation

kV/s

kV/µs

VDS 300V

dVDS/dt

dV/dt

Drain(D)

Ta=25°C

Tc=25°C

2.02

270

Operating and storage

temperature range

Tch

+150

-55 to +150

°C

Tstg

Gate(G)

*1 Starting Tch=25°C,IAS=13A,L=6.13mH,Vcc=48V,RG=50Ω

Source(S)

EAS limited by maximum channel temperature and avalanche current.

See to the ‘Avalanche Energy’ graph.

*2 Repetitive rating : Pulse width limited maximum channel temperature.

See to the ‘Transient Thermal impedance’ graph.

*3 IF -ID, -di/dt=50A/µs, VCC BVDSS, Tch 150°C

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Item

Symbol

V(BR)DSS

VGS(th)

Test Conditions

Drain-source breakdown voltaget

Gate threshold voltage

ID= 250 A

VGS=0V

300

ID= 250 A

VDS=VGS

3.0

5.0

µA

VDS=300V VGS=0V

Tch=25°C

Zero gate voltage drain current

IDSS

Tch=125°C

250

100

VDS=240V VGS=0V

VGS=±30V

VDS=0V

ID=16A VGS=10V

ID=16A VDS=25V

VDS=25V

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

IGSS

RDS(on)

gfs

0.10

0.13

Ω

1970

335

Ciss

Coss

Crss

td(on)

2955

502

Output capacitance

VGS=0V

Reverse transfer capacitance

Turn-on time ton

f=1MHz

VCC=180V ID=16A

VGS=10V

7.5

Turn-off time toff

td(off)

RGS=10 Ω

10.5

44.5

Total Gate Charge

VCC=150V

ID=32A

Gate-Source Charge

Gate-Drain Charge

QGS

QGD

VSD

13.5

20.5

VGS=10V

0.90

270

3.0

1.50

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

IF=32A VGS=0V Tch=25°C

IF=32A VGS=0V

-di/dt=100A/µs

µC

trr

Qrr

Tch=25°C

Thermalcharacteristics

Item

Symbol

Test Conditions

Min.

Typ.

Max. Units

Rth(ch-c)

channel to case

0.463

°C/W

Thermal resistance

Rth(ch-a)

channel to ambient

75.0

°C/W

12 3 4

中文翻译

下载PDF

与2SK3774-01S相关器件

型号	品牌	获取价格	描述	数据表
2SK3774-01SJ	FUJI	获取价格	Power Field-Effect Transistor, 32A I(D), 300V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
2SK3775-01	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3776-01	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3777-01R	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3778-01	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3779-01R	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK377J	SANYO	获取价格	CAPACITOR MICROPHONE APPLICATIONS
2SK377K	SANYO	获取价格	CAPACITOR MICROPHONE APPLICATIONS
2SK377L	SANYO	获取价格	CAPACITOR MICROPHONE APPLICATIONS
2SK377M	SANYO	获取价格	CAPACITOR MICROPHONE APPLICATIONS

与2SK3774-01S相关文章

意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

9
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

13
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

14
晶圆厂易主：Coherent公司2000万英镑出售苹果供应链关键资产
2024-10-08

36

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK3774-01S

2SK3774-01S 数据手册

与2SK3774-01S相关器件

与2SK3774-01S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK3774-01S

2SK3774-01S 数据手册

与2SK3774-01S相关器件

与2SK3774-01S相关文章

您还可以找

您在本页遇到什么问题？