Datasheet > 2SK3767

2SK3767

更新时间： 2024-11-24 21:54:03

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	229K
描述
Silicon N Channel MOS Type Switching Regulator Applications

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数据手册
替代型号

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2SK3767 数据手册

2SK3767

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3767

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

= 3.3Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 1.6S (typ.)

= 100μA (V

Low leakage current: I

= 600 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

th DS

Maximum Ratings

(Ta 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

600

±30

DSS

Drain-gate voltage (R

= 20 kΩ)

DGR

Gate-source voltage

GSS

(Note 1)

Drain current

Pulse (Note 1)

1: Gate

2: Drain

3: Source

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

(Note 2)

Avalanche current

JEDEC

JEITA

―

Repetitive avalanche energy (Note 3)

Channel temperature

°C

SC-67

2-10U1B

Weight : 1.7 g (typ.)

150

Storage temperature range

stg

-55~150

TOSHIBA

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

5.0

°C/W

th (ch-c)

62.5

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: = 90 V, T = 25°C（initial））, L = 41mH, R = 25 Ω , I

= 2 A

ch AR

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2004-12-10

12 3 4 5 6

中文翻译

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2SK3767 替代型号

型号	品牌	替代类型	描述	数据表
FQPF2N60C	FAIRCHILD	功能相似	600V N-Channel MOSFET

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2SK3767_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK3767_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK3769-01MR	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
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2SK376L	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 250UA I(DSS) \| SPAK
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