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2SK3763 PDF预览

2SK3763

更新时间: 2024-10-30 07:32:39
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管场效应晶体管
页数 文件大小 规格书
6页 93K
描述
Field Effect Transistor Silicon N Channel MOS Type ( pi -MOSIV)

2SK3763 数据手册

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2SK3763  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV)  
2SK3763  
unit:mm  
Switching Regulator Applications  
4.7 max  
10.5 max  
3.84±0.2  
1.3  
·
·
·
·
Low drain-source ON resistance: R  
High forward transfer admittance: |Y | = 2.6 S (typ.)  
= 3.7Ω (typ.)  
DS (ON)  
fs  
Low leakage current: I  
DSS  
= 100 μA (V  
= 720 V)  
= 10 V, I = 1 mA)  
D
DS  
Enhancement-mode: V = 2.0~4.0 V (V  
th  
DS  
Maximum Ratings (Ta  
= 25°C)  
1.5 max  
0.81  
0.45  
Characteristics  
Symbol  
Rating  
Unit  
2.7  
Drain-source voltage  
V
V
V
900  
900  
±30  
3
V
V
V
A
DSS  
DGR  
GSS  
7  
254  
2.54  
Drain-gate voltage (R = 20 kW)  
GS  
1
2
3
Gate-source voltage  
DC  
(Note 1)  
I
D
Drain current  
Pulse (t = 1 ms)  
I
9
DP  
(Note 1)  
Drain power dissipation (Tc = 25°C)  
P
D
69  
W
1. Gate  
2. Drain(HEAT SINK)  
3. Source  
Single pulse avalanche energy  
E
56.7  
mJ  
AS  
(Note 2)  
Avalanche current  
I
3
6.9  
A
AR  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
AR  
mJ  
°C  
°C  
JEDEC  
TO-220AB  
SC-46  
T
150  
ch  
Storage temperature range  
T
stg  
-55~150  
JEITA  
TOSHIBA  
Weight : 2.0g(typ.)  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
2
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.81  
83.3  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
Note 1: Please use devices on conditions that the channel temperature is below 150°C.  
Note 2: V = 90 V, T = 25°C, L =11.6 mH, I = 3.0 A, R = 25 W  
1
DD ch  
AR  
G
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
3
2004-02-26  
1

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