Datasheet > 2SK3763

2SK3763

更新时间： 2024-11-25 07:32:39

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	93K
描述
Field Effect Transistor Silicon N Channel MOS Type ( pi -MOSIV)

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中文翻译

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2SK3763 数据手册

2SK3763

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV)

2SK3763

unit：ｍｍ

Switching Regulator Applications

4.7max

4.7 max

10.5 max

10.5max

3.84±0.2

1.3

Low drain-source ON resistance: R

High forward transfer admittance: |Y | = 2.6 S (typ.)

= 3.7Ω (typ.)

DS (ON)

Low leakage current: I

DSS

= 100 μA (V

= 720 V)

= 10 V, I = 1 mA)

Enhancement-mode: V = 2.0~4.0 V (V

Maximum Ratings (Ta

= 25°C)

1.5 max

0.81

0.45

0.81 max

0.45

Characteristics

Symbol

Rating

Unit

2.7

Drain-source voltage

900

±30

DSS

DGR

GSS

2.7

2.54

Drain-gate voltage (R = 20 kW)

Gate-source voltage

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

1. Gate

2. Drain(HEAT SINK)

3. Source

Single pulse avalanche energy

56.7

(Note 2)

Avalanche current

6.9

Repetitive avalanche energy (Note 3)

Channel temperature

°C

JEDEC

TO-220AB

SC-46

―

150

Storage temperature range

stg

-55~150

JEITA

TOSHIBA

Weight : 2.0g(typ.)

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.81

83.3

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: V = 90 V, T = 25°C, L =11.6 mH, I = 3.0 A, R = 25 W

DD ch

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2004-02-26

12 3 4 5 6

中文翻译

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