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2SK374S PDF预览

2SK374S

更新时间: 2024-02-29 06:24:13
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 35K
描述
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN

2SK374S 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
Is Samacsys:N配置:SINGLE
最大漏极电流 (ID):0.03 AFET 技术:JUNCTION
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK374S 数据手册

 浏览型号2SK374S的Datasheet PDF文件第2页 
Silicon Junction FETs (Small Signal)  
2SK374  
Silicon N-Channel Junction FET  
For low-frequency amplification  
For switching  
unit: mm  
2.8 +00..32  
1.5 +00..0255  
0.65±0.15  
0.65±0.15  
Features  
Low noise-figure (NF)  
1
2
High gate to drain voltage VGDO  
Mini-type package, allowing downsizing of the sets and automatic  
insertion through the tape/magazine packing.  
3
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate to Drain voltage  
Gate to Source voltage  
Drain current  
Symbol  
VDSX  
VGDO  
VGSO  
ID  
Ratings  
Unit  
V
0.1 to 0.3  
0.4±0.2  
55  
55  
V
1: Source  
2: Drain  
3: Gate  
JEDEC: TO-236  
EIAJ: SC-59  
Mini Type Package (3-pin)  
55  
V
30  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
Marking Symbol (Example): 2B  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
200  
Tch  
150  
Tstg  
55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
20  
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Drain voltage  
IDSS  
VDS = 10V, VGS = 0  
GS = 30V, VDS = 0  
1
IGSS  
VGDC  
VGSC  
gm  
V
10  
IG = 100µA, VDS = 0  
55  
80  
Gate to Source cut-off voltage  
Mutual conductance  
VDS = 10V, ID = 10µA  
5  
V
VDS = 10V, ID = 5mA, f = 1kHz  
2.5  
7.5  
6.5  
1.9  
mS  
pF  
Input capacitance (Common Source) Ciss  
VDS = 10V, VGS = 0, f = 1MHz  
Reverse transfer capacitance (Common Source) Crss  
pF  
VDS = 10V, VGS = 0, Rg = 100kΩ  
Noise figure  
NF  
2.5  
dB  
f = 100Hz  
* IDSS rank classification  
Runk  
P
Q
R
S
IDSS (mA)  
1 to 3  
2BP  
2 to 6.5  
2BQ  
5 to 12  
2BR  
10 to 20  
2BS  
Marking Symbol  
1

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