2SK3754(F)

更新时间： 2024-10-30 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体驱动器转换器继电器晶体管功率场效应晶体管开关脉冲电机 DC-DC转换器局域网
页数	文件大小	规格书
3页	146K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,5A I(D),SC-67

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技术参数
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2SK3754(F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	25 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

2SK3754(F) 数据手册

2SK3754

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

2SK3754

Relay Drive, DC−DC Converter and

Unit: mm

Motor Drive Applications

•

4.5-V gate drive

Low drain-source ON resistance: R

= 71 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 5.0 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 30 V)

DSS

Enhancement-model: V = 1.3~2.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±20

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

SC-67

2-10R1B

Single pulse avalanche energy

4.0

TOSHIBA

(Note 2)

Weight: 1.9 g (typ.)

Avalanche current

2.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

5.0

°C/W

th (ch-c)

62.5

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: =24 V, T = 25°C (initial), L = 0.5 mH, R = 25 Ω, I = 2.5 A

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2006-11-16

12 3

中文翻译

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与2SK3754(F)相关器件

型号	品牌	获取价格	描述	数据表
2SK3754(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,5A I(D),SC-67
2SK3754_09	TOSHIBA	获取价格	Relay Drive, DCâDC Converter
2SK3755	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3756	TOSHIBA	获取价格	Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
2SK3756(TE12L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,7.5V V(BR)DSS,1A I(D),TO-243
2SK3757	TOSHIBA	获取价格	Silicon N-Channel MOS Type Switching Regulator Applications
2SK3757_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK3758	TOSHIBA	获取价格	Switching Regulator Applications
2SK3759	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Cha
2SK375L	HITACHI	获取价格	HIGH SPEED POWER SWITCHING

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