是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | End Of Life | 零件包装代码: | SC-67 |
包装说明: | LEAD FREE, 2-10U1B, SC-67, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.35 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 103 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 450 V | 最大漏极电流 (Abs) (ID): | 2 A |
最大漏极电流 (ID): | 2 A | 最大漏源导通电阻: | 2.45 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 30 W |
最大脉冲漏极电流 (IDM): | 5 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3757_09 | TOSHIBA |
获取价格 |
Switching Regulator Applications | |
2SK3758 | TOSHIBA |
获取价格 |
Switching Regulator Applications | |
2SK3759 | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N Cha | |
2SK375L | HITACHI |
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HIGH SPEED POWER SWITCHING | |
2SK375S | HITACHI |
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HIGH SPEED POWER SWITCHING | |
2SK376 | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 60UA I(DSS) | SPAK | |
2SK3760 | TOSHIBA |
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Switching Regulator Applications | |
2SK3760 | FORMOSA |
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( PIE-MOS6) | |
2SK3761 | TOSHIBA |
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?) | |
2SK3762 | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |