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2SK3757 PDF预览

2SK3757

更新时间: 2024-10-30 04:26:31
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体稳压器开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
6页 251K
描述
Silicon N-Channel MOS Type Switching Regulator Applications

2SK3757 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:End Of Life零件包装代码:SC-67
包装说明:LEAD FREE, 2-10U1B, SC-67, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.35
Is Samacsys:N雪崩能效等级(Eas):103 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:450 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:2.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):30 W
最大脉冲漏极电流 (IDM):5 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3757 数据手册

 浏览型号2SK3757的Datasheet PDF文件第2页浏览型号2SK3757的Datasheet PDF文件第3页浏览型号2SK3757的Datasheet PDF文件第4页浏览型号2SK3757的Datasheet PDF文件第5页浏览型号2SK3757的Datasheet PDF文件第6页 
2SK3757  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)  
2SK3757  
Switching Regulator Applications  
Unit: mm  
Low drain-source ON resistance: R  
= 1.9 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 1.0 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 450 V)  
DSS  
DS  
Enhancement model: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
450  
450  
±30  
2
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
1: Gate  
Pulse (Note 1)  
I
5
DP  
2: Drain  
3: Source  
Drain power dissipation (Tc = 25°C)  
P
30  
W
D
AR  
AR  
Single pulse avalanche energy  
JEDEC  
JEITA  
E
103  
mJ  
(Note 2)  
SC-67  
2-10U1B  
Weight: 1.7 g (typ.)  
Avalanche current  
I
2
3
A
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
2
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
4.17  
62.5  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
1
Note 1: Ensure that the channel temperature does not exceed 150°C during  
use of the device.  
Note 2:  
V
DD  
= 90 V, T = 25°C (initial), L = 42.8 mH, R = 25 Ω, I  
= 2 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with caution.  
3
1
2006-11-06  

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