Datasheet > 2SK3758

2SK3758

更新时间： 2024-11-25 06:26:19

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	92K
描述
Switching Regulator Applications

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中文翻译

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技术参数
数据手册

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2SK3758 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	58 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

2SK3758 数据手册

2SK3758

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ)

2SK3758

unit：ｍｍ

Switching Regulator Applications

4.7max

4.7 max

10.5 max

10.5max

Low drain-source ON resistance: R

High forward transfer admittance: |Y | = 3.5S (typ.)

= 1.35Ω (typ.)

3.84±0.2

DS (ON)

1.3

Low leakage current: I

DSS

= 100 μA (V

= 500 V)

= 10 V, I = 1 mA)

Enhancement-mode: V = 2.0~4.0 V (V

/Circuit

Maximum Ratings (Ta

= 25°C)

1.5 max

Unit

Characteristics

Symbol

Rating

0.81

0.45

0.81 max

Drain-source voltage

500

±30

DSS

DGR

GSS

Drain-gate voltage (R = 20 kW)

2.7

Gate-source voltage

2.25.544

(Note 1)

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

(Note 2)

1. Gate

2. Drain(HEAT SINK)

3. Source

Avalanche current

5.8

Repetitive avalanche energy (Note 3)

Channel temperature

°C

JEDEC

JEITA

SC-46

150

Storage temperature range

-55~150

stg

TO-220AB

TOSHIBA

―

Thermal Characteristics

Weight : 2.0g(typ.)

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.16

83.3

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: V = 90 V, T = 25°C(initial), L = 0.82 mH, I = 5 A, R = 25 W

DD ch

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2004-02-26

12 3 4 5 6

中文翻译

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